r07ds0424ej0200 rev.2.00 page 1 of 6 feb 27, 2012 preliminary datasheet RJK6024DPE 600v - 0.4a - mos fet high speed power switching features ? low on-resistance r ds(on) = 28 ? typ. (at i d = 0.2 a, v gs = 10 v, ta = 25 ? c) ? low leakage current ? high speed switching outline 1 2 3 4 renesas package code: prss0004ae-b (package name: ldpak(s)-(1) ) 1. gate 2. drain 3. source 4. drain d g s absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 600 v gate to source voltage v gss ? 30 v drain current i d 0.4 a drain peak current i d (pulse) note1 0.6 a body-drain diode reverse drain current i dr 0.4 a body-drain diode reverse drain peak current i dr (pulse) note1 0.6 a channel dissipation pch note2 20 w channel to case thermal impedance ? ch-c 6.25 ?c/w channel temperature tch 150 ?c storage temperature tstg ?55 to +150 ?c notes: 1. pw ? 10 ? s, duty cycle ? 1% 2. value at tc = 25 ?c r07ds0424ej0200 rev.2.00 feb 27, 2012
RJK6024DPE preliminary r07ds0424ej0200 rev.2.00 page 2 of 6 feb 27, 2012 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 600 ? ? v i d = 10 ma, v gs = 0 zero gate voltage drain current i dss ? ? 1 ? a v ds = 600 v, v gs = 0 gate to source leak current i gss ? ? 0.1 ? a v gs = ? 30 v, v ds = 0 gate to source cutoff voltage v gs(off) 3 ? 5 v v ds = 10 v, i d = 1 ma static drain to source on state resistance r ds(on) ? 28 42 ? i d = 0.2 a, v gs = 10 v note3 input capacitance ciss ? 37.5 ? pf output capacitance coss ? 7.5 ? pf reverse transfer capacitance crss ? 0.9 ? pf v ds = 25 v v gs = 0 f = 1 mhz turn-on delay time t d(on) ? 30 ? ns rise time t r ? 14.5 ? ns turn-off delay time t d(off) ? 48 ? ns fall time t f ? 77 ? ns i d = 0.2 a v gs = 10 v r l = 1500 ? rg = 10 ? total gate charge qg ? 4.3 ? nc gate to source charge qgs ? 0.5 ? nc gate to drain charge qgd ? 3.2 ? nc v dd = 480 v v gs = 10 v i d = 0.4 a body-drain diode forward voltage v df ? 0.85 1.45 v i f = 0.4 a, v gs = 0 note3 body-drain diode reverse recovery time t rr ? 230 ? ns i f = 0.4 a, v gs = 0 di f /dt = 50 a/? s notes: 3. pulse test 4. since this device is equipped with high voltage fet chip (v dss ?? 600 v), high voltage may be supplied. therefore, please be sure to confirm about electr ic discharge between drain terminal and other terminal. 5. this device is sensitive to electrostatic discharge. it is recommended to adopt appropriate cautions when handling this product.
RJK6024DPE preliminary r07ds0424ej0200 rev.2.00 page 3 of 6 feb 27, 2012 main characteristics 0 0.6 0.5 0.4 0.3 0.2 0.1 0 4 8 12 16 20 drain to source voltage v ds (v) drain current i d (a) typical output characteristics gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics drain current i d (a) drain to source on state resistance r ds(on) () static drain to source on state resistance vs. drain current (typical) drain to source voltage v ds (v) drain current i d (a) maximum safe operation area case temperature tc (c) static drain to source on state resistance r ds(on) () static drain to source on state resistance vs. temperature (typical) ta = 25c pulse test 5.4 v v gs = 5 v 5.2 v 5.6 v 5.8 v 6 v 8, 10 v reverse drain current i dr (a) reverse recovery time t rr (ns) body-drain diode reverse recovery time (typical) 0.001 0.01 0.1 1 10 0.1 1 10 100 1000 tc = 25c 1 shot operation in this area is limited by r ds(on) 10 s pw = 100 s 0.01 1 0.1 100 1000 10 v gs = 10 v ta = 25c pulse test 0.1 1 0.01 02 468 10 v ds = 10 v pulse test tc = ?25c 25c 75c 0 20 40 60 80 -25 0 50 25 75 100 125 150 v gs = 10 v pulse test 0.1 a i d = 0.4 a 0.2 a 0.1 1 10 1000 100 10 di / dt = 50 a / s v gs = 0, ta = 25c
RJK6024DPE preliminary r07ds0424ej0200 rev.2.00 page 4 of 6 feb 27, 2012 5.0 4.5 4.0 3.5 3.0 2.5 2.0 0.6 0.5 0.4 0.3 0.2 0.1 800 0 16 600 12 400 8 200 0 4 24 6810 0 capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage (typical) gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics (typical) 0 0.4 0.8 1.2 1.6 source to drain voltage v sd (v) reverse drain current vs. source to drain voltage (typical) reverse drain current i dr (a) case temperature tc (c) gate to source cutoff voltage vs. case temperature (typical) gate to source cutoff voltage v gs(off) (v) 0 -25 0 25 50 75 100 125 150 v ds v gs v dd = 480 v 300 v 100 v v dd = 480 v 300 v 100 v v ds = 10 v 1 ma 0.1 ma i d = 0.4 a ta = 25 c v gs = 0 v ta = 25 c pulse test 02 0 0 100 50 150 300 250 100 1 10 0.1 v gs = 0 f = 1 mhz ta = 25c ciss coss crss i d = 10 ma
RJK6024DPE preliminary r07ds0424ej0200 rev.2.00 page 5 of 6 feb 27, 2012 normalized transient thermal impedance s (t) t r t d(on) vin 90% 90% 10% 10% vout t d(off) 90% 10% t f switching time test circuit waveform vin monitor d.u.t. vin 10 v r l v dd = 300 v vout monitor 10 tc = 25c 10 1 0.1 100 1m 10m 100m 1 10 10 normalized transient thermal impedance vs. pulse width pulse width pw (s) p dm pw t d = pw t ch ? c (t) = s (t) ? ch ? c ch ? c = 6.25 c/w, tc = 25 c d = 1 0.5 0.2 0.1 0.05 1 shot pulse 0.02 0.01
RJK6024DPE preliminary r07ds0424ej0200 rev.2.00 page 6 of 6 feb 27, 2012 package dimensions 10.2 0.3 1.37 0.2 (1.5) (1.4) 8.6 0.3 10.0 + 0.3 ? 0.5 4.44 0.2 1.3 0.15 0.1 + 0.2 ? 0.1 0.4 0.1 2.49 0.2 0.86 + 0.2 ? 0.1 2.54 0.5 2.54 0.5 1.3 0.2 3.0 + 0.3 ? 0.5 (1.5) 7.8 6.6 2.2 1.7 7.8 7.0 sc-83 1.30g mass[typ.] ldpak(s)-(1) / ldpak(s)-(1)v prss0004ae-b renesas code jeita package code previous code unit: mm package name ldpak(s)-(1) ordering information orderable part number quan tity shipping container RJK6024DPE-00#j3 1000 pcs taping
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